Overview Academic/Research Interest Areas

Growth and device implementation in wide bandgap semiconductors (GaN, AlN, InN, SiC, Diamond) using molecular beam epitaxy (MBE), gas-source MBE and atomic layer epitaxy (ALE). This effort focuses on the cubic phase of SiC and group III-nitrides, integration with existing Si technology, and possible emergence of wafer fabrication methods in this material system.

Develop a new Silicon-on-Insulator (SOI) technology using a newly developed epitaxial method; solid-metal mediated molecular beam epitaxy (SMM-MBE).

Farication and growth of planar field emission devices using group II-VI materials.

Professional Affiliations

American Vacuum Society (AVS)

Materials Research Society (MRS)

Recent Publications

"Incorporation of Accelerated Low-Energy (50-560 eV) In Ions In+ in Si(100) Films During Growth by Molecular Beam Epitaxy,". with J. Knall, S.A. Barnett, J.E. Sundgren, L.C. Markert, A. Rockett and J.E. Greene. J. Appl. Phys, 65, 172, 1989.

"Incorporation Probabilities and Depth Distributions of Coevaporated Al During Si(100) Molecular Beam Epitaxy," with J. E. Sundgren, J.V. Hansson, L.C. Markert and J.E. Greene. Thin Solid Films, 184, 61 (1990).

"Epitaxial Growth of Al on Si by Thermal Evaporation in Ultra-High Vacuum: Growth on Si(100) 2x1 Single Domain and Double Domain Surfaces at Room Temperature", with G. Radnoczi, J. E. Sundgren and G.V. Hansson, Surface Sci. 236, 53 (1990).

"Growth of Metastable Ge1-xSnx/Ge Strained Layer Superlattices on Ge(001)2x1 by Temperature Modulated Molecular Beam Epitaxy", with O. Gurdal, M. Sardela, J. E. Greene, H.H. Radamson, J. E. Sundgren and J. V. Hansson, Appl. Phys. Lett. 67, 956 (1995).

"Growth and Characterization of Overlayers Deposited in UHV Using Thermal and Low-Energy ion Beam," Linkoping Studies in Science and Technology, Dissertations, No. 235, ISBN 91-7870-697-1.

Educational Background

Licentiate of Engineering, Linkoping Institute of Technology, Sweden, 1987.

Ph.D., Materials Physics, Linkoping Institute of Technology, Sweden, 1990.